PART |
Description |
Maker |
GTVA221701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
PXAC182002FC PXAC182002FC-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFA181001GL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
PTFA240451E |
Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz
|
Infineon Technologies AG
|
PTFA260851E PTFA260851F |
Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 鈥?2700 MHz
|
Infineon Technologies AG
|
PTFA180701E PTFA180701F |
Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 鈥?1880 MHz
|
Infineon Technologies AG
|
PTFA092211EL PTFA092211FL |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 ?960 MHz
|
Infineon Technologies AG
|
PTFA192001F PTFA192001E |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
|
Infineon Technologies AG
|
PTFA092213EL PTFA092213FL |
Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920-960 MHz
|
Infineon Technologies AG
|
PTFB091802FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ?960 MHz
|
Infineon Technologies A...
|
PTFB211501F PTFB211501E |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|